Bulk Defect-Mediated Absorption Sub-Bandgap All-Silicon Photodetector with Low Dark Current Density at Ambient Temperatures - 期刊论文

面向下一代智能存储与光子计算的量子材料与器件

Bulk Defect-Mediated Absorption Sub-Bandgap All-Silicon Photodetector with Low Dark Current Density at Ambient Temperatures

时间：2023-05-30

DOI:10.1021/acsphotonics.3c00768, Abstrct:

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