Defect-tolerant semiconductors for photovoltaics


Defect-tolerant semiconductors for photovoltaics

 Date: August 9, 2018

 Time: 10:00-11:00, Thursday

 Location: Room 205, East Guanghua Buliding

 Speaker:Robert Hoye

 Host:Yiqiang Zhan

 Abstract: Defect-tolerant semiconductors have the potential to achieve higher performance when synthesised by low-cost methods compared to traditional materials. This can lead to a paradigm shift in the development of technologies (e.g., photovoltaics, lighting and transistors) that currently rely on semiconductors synthesised by expensive techniques. In this talk, I will firstly discuss a material (lead-halide perovskite) that fits this description, and how we can use it to enhance the performance of silicon solar cells through the creation of perovskite-silicon tandems. I will next discuss the exploration of lead-free alternatives based on bismuth compounds, which are significantly less toxic than lead. In particular, I will focus on bismuth oxyiodide (BiOI) and a double perovskite compound, Cs2AgBiBr6.

 Biography: Dr Robert Hoye is a Research Fellow at the University of Cambridge, working on the discovery of semiconductors for optoelectronics. During his PhD (2012-2014), he developed an atmospheric pressure spatial atomic layer deposition reactor, which grew oxide semiconductors two orders of magnitude faster than industry-standard methods. He was awarded the Jackman prize for best thesis. Dr. Hoye was subsequently a Postdoctoral Research Associate at the Massachusetts Institute of Technology (2015-2016), where he designed new defect-tolerant bismuth-based semiconductors for photovoltaics. His work was awarded a patent and recognised by the US Department of Energy. In 2018, Dr. Hoye has been awarded an early-career fellowship by the Royal Academy of Engineering, which allows him to be a Principal Investigator at Cambridge. In 2018, he was awarded the Young Engineer of the Year prize by the Royal Academy of Engineering