We have MS.c., Ph.D. and post-doc researcher positions available. 

Research focus:

- Gallium Nitride (GaN) optoelectronic devices

- High-speed photonics devices

- Laser diode (LD) and superluminescent diode (SLD)

- Visible light communication and free-space optical communications

!!We accepting summre interns!!

For prospective students:

If your first language is not Chinese or English, you are expected to obtain one of the following qualifications:

1.      TOEFL: 95 or above

2.      IELTS: 7 or above

3.      GRE: 310 or above (including Analytical Writing)

4.      CET-6: 580 or above

5.      Pass the National Test for English Majors (TEM-4 or TEM-8)

6.      Has obtained a bachelor's degree or above in the United Kingdom, the United States, Canada, Australia, or New Zealand. 

Optoelectronics devices and components, semiconductor lasers, III-nitride materials and devices, visible light communications (VLC), LiFi devices and systems, laser lighting, underwater wireless optical communications (UWOC) and photonics integrated circuit.

APL Photonics Early Career Editorial Advisory Board (ECEAB) 

IEEE Photonics Journal Associate Editor

IEEE Photonics Society Globalization Committee Member 

IEEE Electron Devices Society (EDS) Young Professionals Committee Member 

IEEE Smart Cities Publication Committee Member

Special Symposium Chair, IEEE Photonics Conference, 2024

Award review committee, Optica Women Scholars program 2022

Future Luminary Selection Committee, 2022

Program Committee Member, Photonics & Advanced Intelligent Systems conference

2022 Okawa Foundation Research Grant 

B.Sc. in Materials Physics, Fudan University

M.Sc. in Materials Science and Engineering, KAUST

Ph.D. in Electrical Engineering, KACST-KAUST-UCSB Solid-State Lighting Center, KACST TIC at KAUST.

Technical Lead & Principal Scientist, SaNoor Technologies Inc. 

Engineering Ethics and Research Methodology

Scientific Research Methodology 

Academic English

Optoelectronics

Modeling and Simulation of Microelectronic and Optoelectronic Devices

Recent works:

[1].       Investigation on large modulation bandwidth InGaN-based blue laser diodes, Optics & Laser Technology, 185, 112601 (2025)

[2].       High-speed blue laser diodes with InGaN quantum barrier for beyond 36 Gbps visible light communications, Laser & Photonics Reviews, 2401751 (2025)

[3].       Down-scaling of GaN-based laser diodes for high-speed modulation characteristics, IEEE Journal of Selected Topics in Quantum Electronics, 31(2), 1502208 (2025)

[4].       Graphene readout silicon-based microtubular photodetectors for encrypted visible light communication, Advanced Materials, 2024, 2413771

[5].       Enabling Technologies to Achieve Beyond 500Gbps Optical Intra-connects Based on WDM Visible Light Laser Communication, Journal of Lightwave Technology (2024, 10.1109/JLT.2024.3486062)

[6].       Low-resistance Ohmic contact for GaN-based laser diodes, Journal of Semiconductors, 2024, 45(12), 122502

[7].       A system enabling 1.5-km Omnidirectional Visible Light Communication through Navigation Light, IEEE Access, 12, 150387 - 150394 (2024)

[8].       Diffuse-LOS Optical Wireless Communication Across Wavy Water-Air-Interface Using UVA Light, IEEE Access, 12, 107959 - 107970 (2024)

[9].       High-speed GaN-based laser diode with modulation bandwidth exceeding 5 GHz for 20 Gbps visible light communication, Photonics Research 12 (6), 1186-1193 (2024)

[10].    Miniaturized AlGaN-based deep-ultraviolet light-emitting and detecting diode with superior light-responsive characteristics, Advanced Optical Materials, 2400499 (2024)

[11].    Study of equivalent circuit of GaN based laser chip and packaged laser, Scientific Reports, 14, 11368 (2024)

[12].    Tutorial on laser-based visible light communications” Chinese Optics Letters, 22(9), 92502 (invited, 2024)

[13].    A wide field-of-view laser based white light transmitter for visible light communications, Optics Letters, 49(10), 2805-2808 (2024)

[14].    Laser-Based Mobile Visible Light Communication System, Sensors 2024, 24(10), 3086 (invited)

[15].    A three-terminal light emitting and detecting diode, Nature Electronics, 7, 279–287 (2024) (Cover article)

[16].     A metasurface-based full-color circular auto-focusing Airy beams transmitter for stable high-speed underwater wireless optical communication, Nature Communications, 15, 2944 (2024) ESI highly cited 

[17].    High-speed GaN-based 405 nm violet superluminescent diode with tilted facet for visible light communications, Phys. Status Solidi A 2024, 2300670

[18].    31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure, Opto-Electronic Science 2 (5), 230005-1-230005-13 (2023)

[19].    Polarization-induced photocurrent switching effect in heterojunction photodiodes, Nano Research 16 (4), 5503-5510 (2023)

[20].    Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10Gbps visible light communication, Photonics Research, 10(10), 2394-2404 (2022, Spotlight on Optic)

[21].    DC-Balanced Even-Dimensional CAP Modulation for Visible Light Communication, Journal of Lightwave Technology, 40(15), 5041 - 5051 (2022)

[22].    46.4 Gbps visible light communication system utilizing a compact tricolor laser transmitter, Optics Express 30 (3), 4365-4373 (2022).