Professional Title:
Position:
Email:chaoshen@fudan.edu.cn
Visiting Address:江湾校区交叉二号楼E2002
Tel:
Home Page:https://faculty.fudan.edu.cn/shenchao/zh_CN/index.htm
Research Interests
*NEWS*
目前承担国家自然科学基金、科技部、上海市科委、江苏省重点研发等多项科研项目,实验室具有一流的实验研究条件,与国内外多所实验室建立合作。
欢迎电子信息、通信、微电子、材料物理、光电等专业同学加入!
欢迎在来信中说明是否符合研究生外国语免修标准(托福、雅思、六级、GRE、GMAT、口译等):https://gs.fudan.edu.cn/f1/35/c12939a454965/page.htm
https://www.scholarmate.com/P/chaoshen
Academic Positions
第三代半导体产业技术创新战略联盟(CASA)青年创新促进委员会委员
IEEE Photonics Journal 期刊副主编
IEEE Photonics Society (IPS) Globalization Committee
IEEE Electron Devices Society (EDS) Young Professionals Committee
IEEE Smart Cities Publication Committee
Senior Member, IEEE
Senior Member, Optica
Awards
日本大川基金会信息通信研究助成奖 (2022)
CASA 第三代半导体卓越创新青年 (2021)
IEEE OGC Optoelectronic Innovation Challenge (2020)
美国NYS Luminate Lighting Award(2019)
芬兰 Nokia Open Innovation Challenge (NOIC 2019)
教育部"春晖杯"中国留学人员创新创业大赛优胜奖 (2019)
IEEE Photonics Conference Best Poster Award (2016)
Education and Working Experience
2011 复旦大学材料科学系,材料物理,BSc.
2013 King Abdullah University of Science and Technology (KAUST),Materials Science and Engineering,MSc.
2017 KACST-KAUST-UCSB, Solid State Lighting Program, PhD.
2017-2018 KAUST创新中心,研究顾问
2017-2020 SaNoor技术公司,研究主管、主任科学家
Teaching
《科技英语》
《光电子学》
《工程伦理与研究方法》
《专业外语》
《微电子与光电子器件建模与仿真》
《智能光电子导论》
《Laser and Integrated Photonics for Optical Comunications》
《Engineering Ethics and Research Methodology》
Publications
https://scholar.google.com/citations?user=UfsNEqgAAAAJ&hl=en
近期部分论著有:
[1]. Investigation on large modulation bandwidth InGaN-based blue laser diodes, Optics & Laser Technology, 185, 112601 (2025)
[2]. High-speed blue laser diodes with InGaN quantum barrier for beyond 36 Gbps visible light communications, Laser & Photonics Reviews, 2401751 (2025)
[3]. Down-scaling of GaN-based laser diodes for high-speed modulation characteristics, IEEE Journal of Selected Topics in Quantum Electronics, 31(2), 1502208 (2025)
[4]. Graphene readout silicon-based microtubular photodetectors for encrypted visible light communication, Advanced Materials, 2024, 2413771
[5]. Enabling Technologies to Achieve Beyond 500Gbps Optical Intra-connects Based on WDM Visible Light Laser Communication, Journal of Lightwave Technology (2024, 10.1109/JLT.2024.3486062)
[6]. Low-resistance Ohmic contact for GaN-based laser diodes, Journal of Semiconductors, 2024, 45(12), 122502
[7]. A system enabling 1.5-km Omnidirectional Visible Light Communication through Navigation Light, IEEE Access, 12, 150387 - 150394 (2024)
[9]. High-speed GaN-based laser diode with modulation bandwidth exceeding 5 GHz for 20 Gbps visible light communication, Photonics Research 12 (6), 1186-1193 (2024)
[10]. Miniaturized AlGaN-based deep-ultraviolet light-emitting and detecting diode with superior light-responsive characteristics, Advanced Optical Materials, 2400499 (2024)
[11]. Study of equivalent circuit of GaN based laser chip and packaged laser, Scientific Reports, 14, 11368 (2024)
[12]. Tutorial on laser-based visible light communications” Chinese Optics Letters, 22(9), 92502 (invited, 2024)
[13]. A wide field-of-view laser based white light transmitter for visible light communications, Optics Letters, 49(10), 2805-2808 (2024)
[14]. Laser-Based Mobile Visible Light Communication System, Sensors 2024, 24(10), 3086 (invited)
[15]. A three-terminal light emitting and detecting diode, Nature Electronics, 7, 279–287 (2024) (Cover article) ESI高被引
[16]. A metasurface-based full-color circular auto-focusing Airy beams transmitter for stable high-speed underwater wireless optical communication, Nature Communications, 15, 2944 (2024) ESI高被引
[17]. High-speed GaN-based 405 nm violet superluminescent diode with tilted facet for visible light communications, Phys. Status Solidi A 2024, 2300670
[18]. 31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure, Opto-Electronic Science 2 (5), 230005-1-230005-13 (2023)
[19]. Polarization-induced photocurrent switching effect in heterojunction photodiodes, Nano Research 16 (4), 5503-5510 (2023)
[20]. Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10Gbps visible light communication, Photonics Research, 10(10), 2394-2404 (2022, Spotlight on Optic)
[21]. DC-Balanced Even-Dimensional CAP Modulation for Visible Light Communication, Journal of Lightwave Technology, 40(15), 5041 - 5051 (2022)
[22]. 46.4 Gbps visible light communication system utilizing a compact tricolor laser transmitter, Optics Express 30 (3), 4365-4373 (2022).
《可见光通信新型发光器件原理与应用》,人民邮电出版社,ISBN:9787115518132
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