Speaker: Borching Su

Time and Date: 15:30 pm, December 6, 2018

Place: Room B415 of Computing Center Building, Handan Campus, Fudan University

Abstract:

The use of (Al,Ga,In)N based nanostructures and devices have emerge as important building blocks for enabling applications spanning the ultraviolet to visible spectrum. The tunable emission wavelength or wavelength selective absorption characteristics of (Al,In,Ga)N offers small footprint, energy saving devices to be fabricated for enabling applications related to energy and optical wireless communication. In this talk, we will discuss our recent research activities on InGaN-based laser and photodetector for solid-state lighting and communications.

Biography:

Tien Khee Ng (Senior Member of IEEE, and Senior Member of OSA) received his Ph.D. (2005) and M.Eng. (2001) degrees in electrical and electronic engineering from Nanyang Technological University, Singapore. Currently, he is a senior research scientist with Ooi-group at King Abdullah University of Science and Technology (KAUST), Saudi Arabia. He is also the co-principal-investigator responsible for the Molecular Beam Epitaxy thrust for the Technology Innovation Center for Solid-State Lighting at KAUST sponsored by Saudi Arabia’s national scientific government institution, KACST.