Semipolar InGaN Light-Emitting Diodes and Laser Diodes

Time & Date: 13:30, June.6, 2012
Place:    Room 138, Henglong Physics Building
Speaker: Yuji Zhao ( University of California, Santa Barbara )

Abstract

Semipolar and nonpolar orientations of group III-Nitrides have attracted considerable attention for realizing high-efficiency light-emitting diodes (LEDs) and laser diodes (LDs). Several advantages over commercially available c-plane structures have been highlighted, including reduced polarization-induced electric fields in the quantum wells (QWs), increased indium uptakes and polarized light emissions. In this talk, I will review several most important properties on semipolar   LEDs and LDs, including high optical polarization ratio, high indium incorporation rate, small wavelength shift and narrow spectrum width. These advantages resulted in high performance blue and green LEDs and LDs.

Biography

Yuji Zhao is a PhD candidate after Prof. Shuji Nakamura in ECE department and Solid State Lighting and Energy Center (SSLEC), University of California, Santa Barbara. In UCSB, he performed pioneering work in the field of high efficiency semipolar and nonpolar LEDs and LDs. He has author or co-authored over 40 journal and conference publications and holds over 10 US patents. He received Outstand Research Award from SSLEC for two consecutive years. He made seminal contribution to the low droop semipolar LEDs, which allows higher efficiency from smaller device area. This work paved the way for cost-effective LED based general lightings and was highlighted by over 30 media in 3 languages including Science, OSA, Semiconductor Today, Laser Focused World, etc. (http://news.sciencemag.org/sciencenow/2012/05/how-leds-got-their-shine-back.html)