Silicon carbide based non-volatile resistive memories

Speaker: Prof. Liu-di Jiang (University of Southampton)

Time and Date: 15:00 - 16:00, Dec. 11, 2013

Place: Room B213, Microelectronics Building, Handan Campus

 

 

Abstract

Memory devices are the cornerstone of modern information technology. Despite of strong demands for continuous scaling down of memory devices to improve memory capacities and performance, classical CMOS scaling of current transistor-based random access memories (RAM) and flash memories will run into serious limitation in the near future due to the intrinsic performance issues associated with nano-scale transistors (e.g. reduced channel length and dielectric isolation etc.). Thus, the latest (2011) International Technology Roadmap for Semiconductors (ITRS) has called for a new generation of non-volatile memory devices to be developed with a view to keeping pace with the exponential growing memory demand of the information society. Resistive switching devices have been recognized as one of the most promising solutions as they offer the best scaling potential, ease of fabrication as well as excellent performance in both on and off stages. Despite a recent surge of research and some promising results in this rapidly developing field, clear winners for RMs are yet to be found. This is mainly because the key functions of resistive memories (RMs) (e.g. on/off ratio, data retention etc.) are strongly dependant on the material properties of the solid electrolytes as well as the design configuration of devices, presenting a major cross-disciplinary challenge.

In this talk, I will give a brief introduction of RMs, followed by presenting SiC based RMs as one of the recent development in my group. All possible non-volatile switching modes including bipolar, unipolar, nonpolar have been obtained in our devices with ultra-high switching ON/OFF ratios as well as excellent retention performance, further suggesting the versatility and potential of these SiC based RMs.

If time allows, I will also briefly present another research area in my group, as carbon nanotube (CNT)/Au composite surfaces for electrical contact application in future MEMS switches. These novel switches are aimed for low force, low current applications in eg. RF telecom, testing instrumentations etc.

 

 

Biography

Xin Li received the Ph.D. degree in Electrical and Computer Engineering from Carnegie Mellon University, Pittsburgh, PA in 2005, and the M.S. and B.S. degrees in Electronics Engineering from Fudan University, Shanghai, China in 2001 and 1998, respectively.

Liudi Jiang was awarded her PhD in 2002 by the University of Dundee for research in advanced material physics. Subsequently (2002-2005), she joined the Scottish Microelectronics Centre at the University of Edinburgh as a postdoctoral research fellow for the development of MEMS technologies for harsh environment applications. She was appointed a RCUK Academic Fellow (Roberts Fellow) in 2006 by the Engineering Material group at the University of Southampton, became a Lecturer in 2008 and a Senior Lecturer in 2013. Liudi is a member of The Institution of Engineering and Technology, a member of the Institute of Physics, and a Chartered Physicist.