GaN Field Effect Transistors: Design, Processing, and Characterization

Speaker: Dr. Wu Lu (The Ohio State University)

Time and Date: 10:00-11:00, Jun. 4, 2014

Place: Room B213, Microelectronics Building, Handan Campus

Abstract

In this talk, I will give an overview of recent progress on development of GaN field effect transistors at OSU. Device structure designs based on polarization engineering will be discussed for high frequency and power switching applications. I will also discuss the processing of gate recessing, gate dielectrics, and post annealing for device performance enhancement. The DC, small signal, large signal, microwave noise, and low frequency noise characteristics of these devices will be presented.

Biography

Wu Lu received his Ph.D in physical electronics and optoelectronics from Southeast University in 1994. He has been a faculty member at the Department of Electrical and Computer Engineering, The Ohio State University, since 2002. Before that he was a postdoctoral research associate or research fellow at few research institutions including Electronics and Telecommunications Research Institute, Nanyang Technological University, and University of Illinois at Urbana-Champaign. He has been holding a World Class University (WCU) professorship at Gwangju Institute of Science and Technology, South Korea, since 2009.