• 硅基先进工艺集成与器件（招收推免及卓博计划学生）
  1. 硅-二维 异质集成
  2. 先进节点工艺集成
  3. 新型逻辑与存储器件（CFET，FinFET，DRAM，低亚阈摆幅）
• 半导体传感器件（招收推免及卓博计划学生）
1. 高性能图像与光电传感(PISD，ICPD，波长探测器)
2. 纳米结构增强光电与气体传感

• 人工智能应用于芯片设计EDA（招收工程硕士）
  1. 人工智能应用于模拟芯片前端设计
  2. 人工智能应用于模拟芯片后端布局布线

小组长期招聘博士后（半导体器件工艺方向）

• IEEE Senior member
• 多个IEEE国际会议分会主席和技术委员，如IEEE S3S，IEEE ICSICT，IEEE IWJT，IEEE ICTA 和IEEE ICICDT等
• 多个会议邀请报告，如半导体青年学术会议，光学工程学会，IEEE ICSICT，IEEE IWJT，IEEE ICTA ，IEEE ICICDT，IEEE ICICM等
• Nature Electronics，IEEE EDL，IEEE TED，IEEE TDMR, Applied physics letters, Solid-state electronics, Microelectronics Journal和Journal of applied physics等杂志审稿人

• 2024----指导研究生获两项IEEE ISEDA 国际会议优秀学生论文奖
• 
  
• 2019-2021----指导研究生连续三年获IEEE CSTIC 国际会议优秀学生论文奖
• 2021----PSSA 杂志60周年封面文章
• 2021---指导研究生获国家奖学金2人次
• 2020---国家级一流本科课程（半导体器件与物理）
• 2019---指导研究生获国家奖学金
• 2019---指导研究生获 复旦-KLA 企业奖学金（全校12人之一）
• 2019---半导体器件顶级期刊 IEEE EDL 封面文章
• 2019----上海市青年科技启明星
• 2016----海外高层次引进人才青年项目

• 2014----IEEE EDL金牌审稿人

• 2013----法国纳米科学基金委优秀博士论文奖

• 2012----提名IEEE EDL, George E. Smith 奖

• 2012----VLSI-TSA最佳会议报告奖

• 2012----EuroSOI最佳会议报告奖

• 2009----上海市优秀硕士论文

• 2016.09至今   复旦大学 研究员

• 2012.10 至 2016.08 Globalfoundries公司，美国 Malta site，高级工程师

• 2009.07至2012.10   法国格勒诺布尔大学   纳米电子与纳米技术博士 （CNRS，CEA-LETI）

• 2006.09至2009.07   复旦大学   微电子与固体电子学硕士

• 2001.09 至2005.07   南昌大学   电子信息工程学士

•  
• 半导体器件物理，研究生必修课；
•  
• 现代CMOS器件，研究生选修课；
•  
• 电子系统导论，本科生必修课；

一作/通信发表SCI/EI 100余篇，申请发明专利50余项。

代表作：

[1]     Ling Tong, Jing Wan*, Kai Xiao, Jian Liu, Jingyi Ma, Xiaojiao Guo, Lihui Zhou, Xinyu Chen, Yin Xia, Sheng Dai, Zihan Xu, Wenzhong Bao* & Peng Zhou*, Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide, Nature Electronics, 6, 37–44 (2023). https://doi.org/10.1038/s41928-022-00881-0

[2]     Kai Xiao, Jing Wan*, Hui Xie, Yuxuan Zhu, Tian Tian, Wei Zhang, Yingxin Chen, Jinshu Zhang, Lihui Zhou, Sheng Dai, Zihan Xu, Wenzhong Bao* and Peng Zhou*, High performance Si-MoS2 heterogeneous embedded DRAM, Nature Communications, 15(1), p.9782 (2024). https://doi.org/10.1038/s41467-024-54218-w

[3]     Baowei Yuan, Zhibo Chen, Yingxin Chen, Chengjie Tang, Weiao Chen, Zengguang Cheng, Chunsong Zhao, Zhaozhao Hou, Qiang Zhang,Weizhuo Gan, Jiacheng Gao, Jiale Wang, Jeffrey Xu, Guangxi Hu，Zhenhua Wu , Kun Luo,MingyanLuo, Yuanbo Zhang , Zengxing Zhang,Shisheng Xiong , Chunxiao Cong , Wenzhong Bao , Shunli Ma, Jing Wan*, Peng Zhou* and Ye Lu *High drain field impact ionization transistors as ideal switches. Nature Communications, 15, 9038(2024).

[4]     Xinyu Chen , Yufeng Xie , Yaochen Sheng , Hongwei Tang , Zeming Wang , Yu Wang , Yin Wang , Fuyou Liao , Jingyi Ma , Xiaojiao Guo , Ling Tong , Hanqi Liu , Hao Liu , Tianxiang Wu , Jiaxin Cao , Sitong Bu , Hui Shen , Fuyu Bai , Daming Huang , Jianan Deng , Antoine Riaud , Zihan Xu , Chenjian Wu , Shiwei Xing , Ye Lu , Shunli Ma , Zhengzong Sun , Zhong-Ying Xue , Professor Zengfeng Di , Xiao Gong , David Wei Zhang , Peng Zhou*, Jing Wan*, Wenzhong Bao*, wafer-Scale Functional Circuits Based on Two Dimensional Semiconductors with Fabrication Optimized by Machine Learning,  Nature Communications, 12, 5953 (2021) 10.1038/s41467-021-26230-x

[5]     Hui Xie, Jingya Cao, Rongshan He, Peng Zhou, Yu-Long Jiang*, Yong Xu*, Fanyu Liu* and Jing Wan*. “Integrating 3T-DRAM into 1T Layout with Substrate Bipolar Effect Using 22 nm FDSOI Technology”, IEEE Electron Device Letters, 46, 393-396 (2025) DOI:10.1109/LED.2024.3523371.

[6]     Tian Tian , Jinshu Zhang , Kai Xiao , Yingxin Chen , Yuxuan Zhu , Peng Zhou , Wenzhong Bao*, Junhao Chu, Jing Wan*, Graphene/Silicon-on-insulator Heterogenous Cascode Amplifier with High Gain, IEEE Electron Device Letters， 10.1109/LED.2024.3464647.

[7]     H. Xie, W. Zhang, P. Zhou, S. Cristoloveanu, Y Xu*, FY Liu* and J Wan*, "A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology", IEEE Electron Device Letters, 45, 558-561 (2024).

[8]     W. Zhang, P. Zhou, Yu-Long Jiang*, FY. Liu* and J. Wan*, "A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability", IEEE Electron Device Letters, 45, 124-127 (2024).

[9]     Zhao-Zhang Yan, Xue-Jiao Wang, Zhao-Yang Li, Quan Jing, Yu-Long Jiang*, Jing Wan*, Performance Improvement Induced by Metal Gate Undercut for Ring Oscillator, IEEE Electron Device Letters, 44, 983-986 (2023)

[10]  YingXin Chen, Kai Xiao, YaJie Qin*, FanYu Liu* and Jing Wan*, A Compact Artificial Spiking Neuron Using a Sharp-Switching FET With Ultra-Low Energy Consumption Down to 0.45 fJ/spike, IEEE Electron Device Letters, 44, 160-163 (2023)，10.1109/LED.2022.3219465

[11]  Haihua Wang, Yu-Long Jiang*, Jing Wan*, Significant Performance Improvement of MicroRNA-375 Detection by Modulation of Au Nanoparticle Distribution Using SOI MOSFET, IEEE Electron Device Letters, 43, 128-130 (2022), 10.1109/LED.2021.3129347

[12]  Zhao-Yang Li, Xue-Jiao Wang, Han-Lun Cai, Zhao-Zhang Yan, Yu-Long Jiang*, Jing Wan*, “Difference between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs”, IEEE Electron Device Letters, 42, 1830-1833, (2021), 10.1109/LED.2021.3124801

[13]  J. Liu, Y. -F. Cao, X. -J. Wang, Y. -L. Jiang*, J. Wan*, A Novel One-transistor Active Pixel Sensor with Tunable Sensitivity,  IEEE Electron Device Letters, 42, 927, (2021) doi: 10.1109/LED.2021.3073930.

[14]  Yong-Feng Cao, M. Arsalan, J. Liu, Yu-Long Jiang* and J. Wan*, A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology. IEEE Electron Device Letters. 40, 738-741 (2019) 封面文章

[15]  JN. Deng, ZX. Guo, YW. Zhang, XY. Cao, SM. Zhang, YC. Sheng, H. Xu, WZ. Bao* and J. Wan^*, MoS2/silicon-on-insulator Heterojunction Field-Effect-Transistor for High-performance Photodetection. IEEE Electron Device Letters. 40, 423-426 (2019)

[16]  J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Novel Bipolar-Enhanced Tunneling FET (BET-FET) with Simulated High ON Current”, IEEE Electron Device Letters. 34, 24 (2013).

[17]  J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration”, IEEE Electron Device Letters. 33, 179 (2012). 提名 2012 年 IEEE 电子学会 George E. Smith 奖