• 人工智能与芯片应用系统设计（与企业联合培养）
  
  1. 1. 人工智能应用于集成电路设计
        
     2. 智能半导体参数测试仪
• 硅基芯片兼容的新型半导体器件
  
  1. 1. 发明新型低亚阈摆幅开关和挥发性存储器 (Z2-FET)
     2. 发明原位光电子图像传感器（PISD）
     3. 系统研究隧穿场效应晶体管(Tunneling FET, TFET)
• 基于新材料的半导体器件
  
  1. 1. Si/MoS2界面耦合光电探测器
     2. 单晶体管波长敏感探测器
     3. 第三代半导体器件

• IEEE Senior member
• 多个IEEE国际会议分会主席和技术委员，如IEEE S3S，IEEE ICSICT，IEEE IWJT，IEEE ICTA 和IEEE ICICDT等
• 多个国际会议邀请报告，如IEEE ICSICT，IEEE IWJT，IEEE ICTA 和IEEE ICICDT等
• IEEE EDL，IEEE TED，IEEE TDMR, Applied physics letters, Solid-state electronics, Microelectronics Journal和Journal of applied physics等杂志审稿人

• 2019-2021----指导研究生连续三年获IEEE CSTIC 国际会议优秀学生论文奖
• 2021----PSSA 杂志60周年封面文章
• 2021---指导研究生获国家奖学金2人次
• 2020---国家级一流本科课程（半导体器件与物理）
• 2019---指导研究生获国家奖学金
• 2019---指导研究生获 复旦-KLA 企业奖学金（全校12人之一）
• 2019---半导体器件顶级期刊 IEEE EDL 封面文章
  
• 2019----上海市青年科技启明星
• 2016----海外高层次引进人才青年项目

• 2014----IEEE EDL金牌审稿人

• 2013----法国纳米科学基金委优秀博士论文奖

• 2012----提名IEEE EDL, George E. Smith 奖

• 2012----VLSI-TSA最佳会议报告奖

• 2012----EuroSOI最佳会议报告奖

• 2009----上海市优秀硕士论文

• 2009----复旦大学优秀硕士论文

• 2012.10 至 2016.08 Globalfoundries公司，Malta，美国，高级工程师

• 2009.07至2012.10   法国格勒诺布尔大学   纳米电子与纳米技术博士 （CNRS，CEA-LETI）

• 2006.09至2009.07   复旦大学   微电子与固体电子学硕士

• 2001.09 至2005.07   南昌大学   电子信息工程学士

• 半导体器件物理，研究生必修课；
• 现代CMOS器件，研究生选修课；
• 电子系统导论，本科生必修课；

专利

[1] 万景，王海华，徐壮壮，一种多针阵列式伪MOS结构测量探头，中国专利公开号：CN113267714A

[2] 万景，王海华，一种纳米金颗粒修饰的伪MOS生化分子传感器及其制备方法，中国专利公开号：CN113311047A

[3] 万景，基于半导体衬底的新型单晶体管像素传感器及制备方法，中国专利公开号：CN112420752A

[4] 万景，宗钰，一种单晶体管多维度光信息探测器，中国专利公开号：CN111463310A

[5] 万景，刘坚，基于绝缘层上硅衬底的可调性能光电传感器及其制备方法，中国专利公开号：CN112382639A

[6] 万景，皮韶冲，刘坚，一种新型单晶体管主动像素传感器及其制备方法，中国专利公开号：CN111446268A

[7] 万景，邓嘉男，基于双光电栅极结构的半导体波长探测器及其制备方法，中国专利公开号：CN112382692A

[8] 万景，包文中，邓嘉男，宗凌逸，基于自对准结构的叠层沟道纳米片晶体管及其制备方法，中国专利公开号：CN112490289A

[9] 万景，黄逸轩，陈颖欣，基于绝缘层上硅衬底的单结晶体管及其制备方法，中国专利，授权.CN111509040B

[10] 万景，肖凯，陈颖欣，基于半导体衬底的凹槽型场效应正反馈晶体管及制备方法，中国专利，授权.CN111477685B

[11] 万景，肖凯，基于体硅的新型半导体场效应正反馈晶体管及制备方法，中国专利，授权.CN110634955B

[12] 万景，基于绝缘层上硅的单晶体管主动像素传感器及制备方法，中国专利,授权.CN109728019B

[13] 万景，邓嘉男，邵金海，陆冰睿，陈宜方,一种半导体光电传感器, 中国专利,授权.CN106711275B 

[14] 万景，邓嘉男，邵金海，陆冰睿，陈宜方,一种基于动态耦合效应的半导体光电传感器及其制备方法,中国专利,授权.CN106876421B 

[15] 万景，邓嘉男，邵金海，陆冰睿，陈宜方,一种半导体场效应正反馈器件,中国专利,授权.CN106876368B

[16] 包文中,宗凌逸,万景,邓嘉男,郭晓娇,张卫,基于二维材料的NS叠层晶体管及其制备方法,中国专利, 授权.CN111446288B

[17] Jing Wan, Andy Wei, Lun Zhao, DaeGeun Yang, Jinping Liu, Tien-Ying Luo, Guillaume Bouche, Mariappan Hariharaputhiran , Gaire, Churamani, "Devices and methods of forming FinFETs with self aligned Fin Formation ", US patent. US9147696B2

[18] Jing Wan, Jinping Liu, Guillaume Bouche, Andy Wei, Lakshmanan Vanamurthy, Cuiqin Xu, Sridhar Kuchibhatla, Rama Kambhampati, Xiuyu Cai, "Replacement low-K spacer", US patent. US9129987B2 

[19] Jing Wan, Jinping Liu, Churamani Gaire, Mariappan Hariharaputhiran , Andy Wei, Bharat Krishnan, Cuiqin Xu, Michael Ganz, "Dopant diffusion barrier to form isolated source/drain in a semiconductor device".  US patent. Application No. US20150214345A1

[20] Jing Wan, Hu, Xiang, Jinping Liu, Gabriel Padron Wells, Andy Wei, Guillaume Bouche, Cuiqin Xu, “Self-aligned contact openings over Fins of a semiconductor device”, US patent. Publication No. US20150303295A1 

[21] Jing Wan , Andy Wei, Jinping Liu, Xiang Hu, Dae-Han Choi, Dae-Geun Yang, Churamani Gaire, Akshey Sehgal, "Forming source/drain regions with single reticle and resulting device", US patent. publication No. US20150255353 A1

[22] Jing Wan, Guillaume Bouche, Andy Wei, ShaoMing Koh, "Integrated circuits with nanowires and methods of manufacturing the same", US patent. US9306019B2

[23] Jinping Liu, Jing Wan , Andy Wei, "Facilitating fabrication gate-all-around nanowire field-effect transistor", US patent. 9263520 B2

[24] Guillaume Bouche, Jing Wan, Andy Wei, ShaoMing Koh, "Methods of Forming Nanowire Devices with Metal-Insulator-Semiconductor Source/Drain Regions and the Resulting Devices", US patent. publication No. US20150333162 A1

[25] ShaoMing Koh, Guillaume Bouche, Jing Wan, Andy Wei, Methods of Forming Nanowire Devices with Doped         Extension Regions and the Resulting Devices, US patent. US9490340B2

[26] ShaoMing Koh, Guillaume Bouche, Jing Wan, Andy Wei, Methods of Forming Nanowire Devices with Spacers and   

    the Resulting Devices, US patent. US9431512B2

[27] Andy Wei, Jing Wan, Dae-Han Choi, “FinFET with confined Epitaxy”, US patent. publication No. US20160005868

[28] Andy Wei, Guillaume Bouche, Jing Wan, Cao, Huy, “Self-aligned gate contact formation”, US patent. publication No. US9640625B2

[29] Andy Wei, Dae Geun Yang, Mariappan Hariharaputhiran , Jing Wan, “Metal gate structure and method of formation”, US patent. US9608086 B2

[30] Xiang Hu, Andy Wei, Dae-Han Choi, Mariappan Hariharaputhiran , Wei Hua Tong, Dae Geun Yang, Akshey Sehgal, Jing Wan, “Partially crystallized Fin hard mask for Fin field-effect-transistor (FinFET) device”, US patent. Application No. 14/219,059

[31] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Z2-FET field-effect transistor with a vertical subthreshold slope and with no impact ionization”, US patent. US8581310. 

[32] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Dynamic memory cell provided with a field-effect transistor having zero swing”, US patent. US8634229

[33] C. Le Royer, S. Cristoloveanu, J. Wan and A. Zaslavsky, "Tunnel transistor with high current by bipolar amplification”, US patent. US9276102B2

[34] C. Le Royer, S. Cristoloveanu, J. Wan and A. Zaslavsky, "Transistor à effet tunnel", EU patent. EP2685504 

[35] J. Wan, S. Cristoloveanu, C. Le Royer and A. Zaslavsky, "Z2FET field effect transistor with zero sub-threshold swing and zero impact ionisation", EU patent. EP2568507

[36] J. Wan, S. Cristoloveanu, C. Le Royer and A. Zaslavsky, " Dynamic memory cell provided with a field-effect transistor with vertical subthreshold slope", EU patent. EP2584606

[37] 万景, 屈新萍, 谢申奇, 陆冰睿, et al., “一种复制纳米压印模板的方法”, Chinese Patent, CN101135842, March 2008.

[38] 万景, 屈新萍, 谢申奇, 陆冰睿, et al., “一种复制纳米压印模板的方法”, Chinese Patent,CN101181836, May 2008.

发表文章

杂志 （SCI收录，*为通信作者）

[1] Haihua Wang, Yu-Long Jiang*, Jing Wan*, Significant Performance Improvement of MicroRNA-375 Detection by Modulation of Au Nanoparticle Distribution Using SOI MOSFET, IEEE Electron Device Letters, (2021),  10.1109/LED.2021.3129347

[2] Zhao-Yang Li, Xue-Jiao Wang, Han-Lun Cai, Zhao-Zhang Yan, Yu-Long Jiang*, Jing Wan*, “Difference between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs”, IEEE Electron Device Letters, 42, 1830-1833, (2021), 10.1109/LED.2021.3124801

[3] Xinyu Chen , Yufeng Xie , Yaochen Sheng , Hongwei Tang , Zeming Wang , Yu Wang , Yin Wang , Fuyou Liao , Jingyi Ma , Xiaojiao Guo , Ling Tong , Hanqi Liu , Hao Liu , Tianxiang Wu , Jiaxin Cao , Sitong Bu , Hui Shen , Fuyu Bai , Daming Huang , Jianan Deng , Antoine Riaud , Zihan Xu , Chenjian Wu , Shiwei Xing , Ye Lu , Shunli Ma , Zhengzong Sun , Zhong-Ying Xue , Professor Zengfeng Di , Xiao Gong , David Wei Zhang , Peng Zhou*, Jing Wan*, Wenzhong Bao*, wafer-Scale Functional Circuits Based on Two Dimensional Semiconductors with Fabrication Optimized by Machine Learning,  Nature Communication, 12, 5953 (2021) 10.1038/s41467-021-26230-x 

[4] Jing Chen, Junqiang Zhu, Ping Li, Xiao-Ming Wu, Ran Liu, Jing Wan*, Tian-Ling Ren*, Fabricating In-Plane MoTe p-n Homojunction Photodetector Using Laser-Induced p-Type Doping, IEEE Transactions on Electron Devices. 68, 9, 4485-4490 (2021)， 10.1109/TED.2021.3099082

[5] Jing Chen, Ping Li, Ran Liu, Xiao-Ming Wu, Jing Wan*, Tian-Ling Ren, Reconfigurable MoTe2 field-effect-transistors and its application in compact CMOS circuits, IEEE Transactions on Electron Devices. 68, 9, 4748-4753 (2021)，10.1109/TED.2021.3096493

[6] J. Liu, Y. -F. Cao, X. -J. Wang, Y. -L. Jiang*, J. Wan*, A Novel One-transistor Active Pixel Sensor with Tunable Sensitivity,  IEEE Electron Device Letters, 42, 927, (2021) doi: 10.1109/LED.2021.3073930.

[7] J. Liu, S. Cristoloveanu, J.Wan* , A Review on the Recent Progress of SOI‐based Photodetectors. Phys. Status Solidi A. 218，200751,(2021) https://doi.org/10.1002/pssa.202000751；60周年创刊封面文章

[8] J. Liu, K. Xiao, J.-N. Deng, A. Zaslavsky, S. Cristoloveanu, Fy. Liu*, J. Wan*, Optimization of Photoelectron In-Situ Sensing Device in FD-SOI, IEEE Journal of the Electron Devices Society. 187, 9, (2021)

[9] Yaochen Sheng, Xinyu Chen, Fuyou Liao, Yin Wang, Jingyi Ma, Jianan Deng, Zhongxun Guo, Sitong Bu, Hui Shen, Fuyu Bai, Daming Huang, Jianlu Wang, Weida Hu, Lin Chen, Hao Zhu, Qingqing Sun, Peng Zhou, David Wei Zhang, Jing Wan*, Wenzhong Bao* ,Gate stack engineering in MoS2 field-effect transistor for reduced channel doping and hysteresis effect, 7, 2000395, Advanced electronic material, (2021), 10.1002/aelm.202000395

[10] M. Arsalan, J. Liu, A. Zaslavsky, S. Cristoloveanu, J.Wan*, Deep-Depletion Effect in SOI Substrates and its Application in Photodetectors With Tunable Responsivity and Detection Range, IEEE Transactions on Electron Devices. 3256, 67, (2020). 10.1109/TED.2020.2998453

[11] Jing Chen, Junqiang Zhu, Qiyuan Wang, Jing Wan*, Ran Liu, Homogeneous 2D MoTe2 CMOS Inverters and p–n Junctions Formed by Laser-Irradiation-Induced p-Type Doping, 2001428, 16, Small, (2020). 10.1002/smll.202001428

[12] Fuyou Liao, Jianan Deng, Xinyu Chen, Yin Wang, Xinzhi Zhang, Jian Liu, Hao Zhu, Lin Chen, Qingqing Sun, Weida Hu, Jianlu Wang, Jing Zhou, Peng Zhou, David Wei Zhang, Jing Wan*, Wenzhong Bao*, A Dual-gate MoS₂ Photodetector Based on Interface Coupling Effect, Small, 16, 1904369, (2020)

[13] J. Liu, K.-M. Zhu, A. Zaslavsky, S. Cristoloveanu, and J. Wan*, Photodiode with Low Dark Current Built in Silicon-on-Insulator Using Electrostatic Doping, Solid State Electron, 168, 107733 (2020) 10.1016/j.sse.2019.107733

[14] Jianan Deng, Lingyi Zong, Mingsai Zhu, Fuyou Liao, Yuying Xie, Zhongxun Guo, Jian Liu, Bingrui Lu, Jianlu Wang, Weida Hu, Peng Zhou, Wenzhong Bao* and Jing Wan*, MoS2/HfO2/Silicon-on-insulator Dual-photogating Transistor with Ambipolar Photoresponsivity for High-resolution Light Wavelength Detection, Advanced Functional Materials, 29, 1906242 (2019) 

[15] Yong-Feng Cao, M. Arsalan, J. Liu, Yu-Long Jiang* and J. Wan*, A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology. IEEE Electron Device Letters. 40, 738-741 (2019) 封面文章

[16] Fuyou Liao, Yaocheng Sheng, Zhongxun Guo, Hongwei Tang, Yin Wang, Lingyi Zong, Xinyu Chen, Antoine Riaud, Jiahe Zhu, Yufeng Xie, Lin Chen, Hao Zhu, Qingqing Sun, Peng Zhou, Xiangwei Jiang, Jing Wan*, Wenzhong Bao*, and David Wei Zhang, MoS2 dual-gate transistors with electrostatically doped contacts, Nano Research, 12, 2515-2519, (2019)

[17] J. Liu, XY. Cao, BR. Lu, YF. Chen, A. Zaslavsky, S. Cristoloveanu and J. Wan*, Dynamic coupling effect in Z2-FET and its application for photodetection, IEEE JEDS, 7, 846-854, (2019) 

[18] JN. Deng, ZX. Guo, YW. Zhang, XY. Cao, SM. Zhang, YC. Sheng, H. Xu, WZ. Bao* and J. Wan*, MoS2/silicon-on-insulator Heterojunction Field-Effect-Transistor for High-performance Photodetection. IEEE Electron Device Letters. 40, 423-426 (2019) 

[19] Wu Zan, Qiaochu Zhang, Hu Xu, Fuyou Liao, Zhongxun Guo, Jianan Deng, Jing Wan*, Hao Zhu, Lin Chen, Qingqing Sun, Shijin Ding, Peng Zhou, Wenzhong Bao* and David Wei Zhang, Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices, Nano Research, 11, 3739 (2018).

[20] X-Y. Cao, W-S. Lin, H-B. Liu, J-N. Deng, M. Arsalan, K-M. Zhu, Y-F. Chen, J. Wan*, “A SOI Photodetector with Field-Induced Embedded Diode Showing High Responsivity and Tunable Response Spectrum by Backgate”, IEEE Transactions on Electron Devices, 65, 5412-5418, (2018). 

[21] JN. Deng, JH. Shao, BR. Lu, YF. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J. Wan*, Interface Coupled Photodetector (ICPD) with High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI), IEEE JEDS, 6, 557-564（2018）. 

[22] J. Wan, A. Zaslavsky, and S. Cristoloveanu, “Comment on "Investigation of tunnel field-effect transistors as a capacitor-less memory cell" [Appl. Phys. Lett. 104, 092108 (2014)]”, Appl. Phys. Lett. 106, 016101 (2015).

[23] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A systematic study of the sharp-switching Z2-FET device: from mechanism to modeling and applications”, Solid-State Electronics. 90, 2 (2013).

[24] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage”, Solid-State Electronics. 84, 147 (2013).

[25] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection”, Solid-State Electronics. 109, 111 (2012).

[26] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration”, IEEE Electron Device Letters. 33, 179 (2012). 提名 2012 年 IEEE 电子学会 George E. Smith 奖

[27] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Novel Bipolar-Enhanced Tunneling FET (BET-FET) with Simulated High ON Current”, IEEE Electron Device Letters. 34, 24 (2013). 

[28] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A tunneling field effect transistor model combining interband tunneling with channel transport”, J. Appl. Phys. 110, 104503 (2011).

[29] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Gate-Induced Drain Leakage in FD-SOI devices: What the TFET teaches us about the MOSFET”, Microelectron. Eng. 88, 1301 (2011).

[30] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Tunneling FETs on SOI: Suppression of Ambipolar Leakage, Low-Frequency Noise Behavior, and Modeling”, Solid-State Electronics. 65-66, 226 (2011).

[31] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Low-frequency noise behavior of tunneling field effect transistors”, Appl. Phys. Lett. 97, 243503 (2010). 

[32] Jing Wan, Zhen Shu, Shen-Qi Xie, Bing-Rui Lu, Ran Liu, Yifang Chen, and Xin-Ping Qu, “Duplication of nanoimprint templates by a novel SU-8/SiO2/PMMA trilayer technique”, J. Vac. Sci. Tech. B. 27, 19 (2009). 被 Virtual Journal of Nanoscale Science and Technology 转载收录

[33] Jing Wan, Shao-Ren Deng, Rong Yang, Zhen Shu, et al., “Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/PMMA trilayer”, Microelectron. Eng. 86, 1238 (2008).

[34] Y. Solaro, J. Wan, P. Fonteneau, C. Fenouillet-Beranger, C. Le Royer, A. Zaslavsky, P. Ferrari, S. Cristoloveanu "Z2-FET: A promising FDSOI device for ESD protection", Solid-State Electronics. 97, 23 (2014). Z2-FET 被 意法半导体公司 用于高性能静电保护

[35] Bing-Rui Lu, Jing Wan, Shen-Qi Xie, Yan Sun, Yifang Chen, Xin-Ping Qu, Ran Liu, “Nanophotonic crystals with chiral elements by a hot embossing process in SU-8”, Microelectron. Eng. 85, 866 (2008).

[36] Shen-Qi Xie, Jing Wan, Bing-Rui Lu, Yan Sun, Yifang Chen, Xin-Ping Qu, Ran Liu, “A nanoimprint lithography for fabricating SU-8 gratings for near-infrared to deep-UV application”, Microelectron. Eng. 85 914 (2008).

[37] BR Lu, J Wan, Z Shu, SQ Xie, Y Chen, E Huq, XP Qu, R Liu, “Nanophotonic crystals with chiral elements by a hot embossing process in SU-8”, Microelectron. Eng. 86, 619 (2009).

[38] R Yang, BR Lu, J Wan, SQ Xie, Y Chen, E Huq, XP Qu, R Liu, “Fabrication of micro/nano fluidic channels by nanoimprint lithography and bonding using SU-8”, Microelectron. Eng. 86 1379 (2009).

[39] Chen Gao, Shao-Ren Deng, Jing Wan, Bing-Rui Lu, Ran Liu, Ejaz Huq, Xin-Ping Qu, Yifang Chen, “22nm silicon nanowire gas sensor fabricated by trilayer nanoimprint and wet etching”, Microelectron. Eng. 87 927 (2010).

[40] Shu-Yi Liu, Tao Chen, Jing Wan, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu, “The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method”, Applied Physics A. 94 775 (2009).

[41] Chen Gao, Zhen Shu, Shao-Ren Deng, Jing Wan, Yifang Chen, Ran Liu, Ejaz Huq, Xin-Ping Qu, , “Silicon Nanowires by combined nanoimprint and angle deposition for gas sensing applications”, Microelectron. Eng. 88 2100 (2011).

[42] Yifang Chen, Yun Zhou, Genhua Pan, Ejaz Huq, Bing-Rui Lu, Shen-Qi Xie, Jing Wan, Zhen Shu, Xin-Ping Qu, Ran Liu, S Banu, S Birtwell, Liudi Jiang, “Nanofabrication of SiC templates for direct hot embossing for metallic photonic structures and meta materials”, Microelectron. Eng. 85 1147 (2008).

[43] Zhen-Cheng Xu, Shen-Qi Xie, Zhen Shu, Bing-Rui Lu, Jing Wan, Yifang Chen, Ejaz Huq, Xin-Ping Qu, Ran Liu, “Fabrication and characterization of high extinction ratio transmission polarizers”, Microelectron. Eng. 87 1005 (2010).

[44] Shao-Ren Deng, Bing-Rui Lu, Bi-Qing Dong, Jing Wan, Zhen Shu, Jing Xue, Yifang Chen, Ejaz Huq, Ran   Liu, Xin-Ping Qu, Effective polarization control of metallic planar chiral metamaterials with complementary rosette pattern fabricated by nanoimprint lithography”, Microelectron. Eng. 87 985 (2010).

[45] S. Cristoloveanu, J. Wan and A. Zaslavsky, “A Review of Sharp-Switching Devices for Ultra-Low Power Applications”, IEEE Journal of the electron devices society (2016).

会议文章 (EI收录，*为通信作者)

[1] Jing Jing Chou, Jian Liu, Jing Wan*, Novel Photodetectors Based on SOI and Two-dimensional Materials, IEEE IWJT, 2021. 邀请报告

[2] Yingxin Chen, Jianan Deng, Qianqian Huang, Wenzhong Bao*, and Jing Wan*，Light-modulated Subthreshold Swing Effect in a MoS2-Si Hetero MOSFET，IEEE CSTIC 2021 最佳会议文章 EI: 20213510831268

[3] JiaHao. Wei, Tian. Zhao, Zheng. Zhang and Jing Wan*，Modeling of CMOS Transistors from 0.18μm Process by Artificial Neural Network, IEEE CSTIC 2021 20213510831419

[4] YX. Chen, K. Xiao, HH. Wang, J. Wan*, The Impact of Incident Wavelength and Incident Intensity on Light-modulated Subthreshold Swing Effect, IEEE ASICON 2021

[5] Jiaxing Zuo, Jing Wan*, Novel Photodetectors and Image Sensors based on SOI Substrate, IEEE ASICON 2021，邀请报告

[6] Wei Mao, Hua Fang, Zheng Zhang, Yi-Fei Huang, Jing-Xiao Zhang, Bi-Jian Lan, Jing Wan*，Automatic design of analog integrated circuit based on multi-objective optimization，IEEE ICSICT 2020 20210309772673

[7] K. Xiao, J. Liu, X. Liu and J. Wan*，Gas sensing CMOS transistors based on SOI substrate, IEEE ICSICT 2020 20210309772642

[8] K. Xiao, J. Liu, Wei Wu, Zheng Xu and J. Wan*, Design of a novel one transistor-DRAM based on bulk silicon substrate, In IEEE CSTIC, 2020. 最佳会议文章 20210309773849

[9] K. Xiao, J. Liu, JN. Deng, YL. Jiang, WZ. Bao, A. Zaslavsky, S. Cristoloveanu, X. Gong, and J. Wan*, Novel Semiconductor Devices Based on SOI Substrate, In IEEE CSTIC, 2020. 20210309773943

[10] JH. Wei, W. Mao, H. Fang, Z. Zhang, JX. Zhang, BJ. Lan and J. Wan*, Advanced MOSFET Model Based on Artificial Neural Network, In IEEE CSTIC, 2020. 20210309773834

[11] J. Liu, M. Arsalan, A. Zaslavsky, S. Cristoloveanu and J. Wan*, Optimization of photoelectron in-situ sensing device in FD-SOI, In IEEE S3S, 2019, 1-4. 20210809937762

[12] KM. Zhu, JH. Wei and J. Wan*, Negative capacitance GaN HEMT with improved subthreshold swing and transconductance. In IEEE S3S, 2019, 1-4. 20210809937712

[13] J. Wan*, WZ. Bao, J. Deng, X. Cao, H. Liu, B. Lu, Y. Chen, A.Zaslavsky, S. Cristoloveanu and M. Bawedin. A review on Z2-FET and PISD based on Silicon-on-insulator substrate. in IEEE ICTA. 2019, p. 1-4. 邀请报告

[14] J. Wan*, WZ. Bao, JN. Deng, J. Liu, M. Arsalan, ZX. Guo and XY. Cao, et al., Novel photodetectors and image sensors based on silicon-on-insulator substrate in IEEE ICICDT, 2019 邀请报告 20193507381987

[15] J. Liu and J. Wan*, Z2-FET: Application in Image Sensing and Self-aligned Structure for Further Scaling Down, IEEE IWJT, 2019 邀请报告 20193707433930

[16] J. Wan*, WZ. Bao, J. Deng, X. Cao, H. Liu, B. Lu, Y. Chen, A.Zaslavsky, S. Cristoloveanu and M. Bawedin. ICPD: a SOI-based photodetector with high responsivity and tunable response spectrum. in The 14th IEEE ICSICT. 2018, p. 1-4. 邀请报告  20193007228335

[17] J. Liu, XY. Cao, BR. Lu, YF. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J. Wan*, Z2-FET: a multi-functional device used for photodetection, CSTIC, 2019 最佳会议文章 20193007228335

[18] J. Wan*, J. Deng, X. Cao, H. Liu, B. Lu, Y. Chen, A.Zaslavsky, S. Cristoloveanu and M. Bawedin. Novel photodetector based on FD-SOI substrate with interface coupling effect. in The 18th International Workshop on Junction Technology (IEEE IWJT 2018). 2018, p. 1-4. 邀请报告 EI索引号20190406415186

[19] Xiao-Ying Cao, Wen-Song Lin, Jia-Nan Deng, Hong-Bin Liu, Kun-Ming Zhu, Muhammad Arsalan, Jing Wan*, A Novel photodetector with the embedded field-induced p-n photodiode in the SOI Substrate, in The 14th IEEE ICSICT. 2018, p. 1-4. EI索引号 20190406414541

[20] KM. Zhu, JN. Deng, XY. Cao, J. Wan*, Ar RIE to improve the source/drain contact in GaN HEMT, in The 14th IEEE ICSICT. 2018, p. 1-4. EI索引 号20190406415157

[21] J. Liu, XY. Cao, BR. Lu, YF. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J. Wan*, A New Photodetector on SOI, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). 2018, p. 1-4.  EI索引 号20191206667769 

[22] M. Arsalan, XY. Cao, BR. Lu,YF. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J. Wan*, A highly sensitive photodetector based on deep-depletion effects in SOI transistors, in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). 2018, p. 1-4. EI索引号 20191206667750

[23] J. Deng, J. Shao, B. Lu, Y. Chen, A. Zaslavsky, S. Cristoloveanu, M. Bawedin and J.Wan*. A Novel Photodetector Based on the Interface Coupling Effect in Silicon-on-Insulator MOSFETs. in IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). 2017, p. 1-4. EI索引号  20182205266610

[24] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Z2-FET used as 1-transistor high-speed DRAM”, Proc. Eur. Solid-State Device Res. Conf (ESSDERC), (2012). 

[25] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Z2-FET: A zero-slope switching device with gate-controlled hysteresis”, Proc. VLSI-TSA Int. Symp., (2012). 最佳会议报告

[26] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Z2-FET: A sharp switching device with gate-controlled hysteresis”, EuroSOI (2012). 最佳会议报告

[27] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “SOI TFETs: Suppresion of ambipolar leakage and low-frequency noise behavior”, Proc. Eur. Solid-State Device Res. Conf (ESSDERC), pp. 341-344, (2010). 

[28] Jing Wan, Shao-Ren Deng, Yi-Fang Chen, Ejaz Huq, Ran Liu, Xin-Ping Qu, “Trilayer Nanoimprint Fabrication and Simulation of the Silicon Nanowire Sensor for Gas Detection”, IEEE-NEMS conference, pp. 1013-1016, (2009). 

[29] Y. Solaro, J. Wan, P. Fonteneau, C. Fenouillet-Beranger, C. Le Royer, A. Zaslavsky, P. Ferrari, S. Cristoloveanu “Z2-FET as a novel FDSOI ESD protection device”, EuroSOI (2013). 

[30] S. Cristoloveanu, J. Wan, C. Le Royer, and A. Zaslavsky, “Innovative Sharp Switching Devices”, ECS Transactions, 54, 65 (2013). 邀请报告

[31] A Zaslavsky, J. Wan, ST Le, P Jannaty, S Cristoloveanu, C Le Royer, DE Perea, Shadi A Dayeh, ST Picraux “Sharp-Switching High-Current Tunneling Devices”, ECS Transactions, 53, 63 (2013). 邀请报告

[32] A. Zaslavsky, J. Wan, S.T. Le, P. Jannaty, S.A. Ddyeh, C. Le Royer, S. Cristoloveanu and S.T. Picraux “Abrupt switching devices : from tunneling to positive feedback.”, International Advanced Workshop on ‘Frontiers in Electronics’ (WOFE’2011), 邀请报告

[33] S. Cristoloveanu, J. Wan, P. Ferrari, M. Bawedin, C. Navarro, A Zaslavsky, C. Le Royer, A. Villalon, C. Fenouillet-Beranger, Y. Solaro, P. Fonteneau, “Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices.”, 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). 邀请报告

[34] S Cristoloveanu, M Bawedin, J Wan, S-J Chang, C Navarro, A Zaslavsky, C Le Royer, F Andrieu, N Rodriguez, F Gamiz, “Innovative capacitorless SOI DRAMs”., IEEE International SOI Conference, (2012)

[35] K–I. Na, W. Van Den Daele, L. Pham–Nguyen, M. Bawedin, K–H. Park, J. Wan, K. Tacchi, S–J. Chang, I. Ionica, Y–H. Bae, J–A. Chroboczek, C. Fenouillet-Beranger, T. Ernst, E. Augendre, C. Le Royer, A. Zaslavsky, H. Iwai and S. Cristoloveanu, “Selected SOI puzzles and tentative answers,” Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, Kiev, Ukraine (25–29 oct. 2010). 邀请报告

[36] Zhen Shu, Jing Wan, Shen-Qi Xie, Bing-Rui Lu, Yifang Chen, Xin-Ping Qu, Ran Liu, “Design and fabrication of Bragg reflectors based on SU-8”, ICSICT., pp. 988 – 991, (2008).

[37] Shen-Qi Xie, Bing-Rui Lu, Jing Wan, Rong Yang, Yifang Chen, Xin-Ping Qu, Ran Liu,  “Development of novel SU-8 based nanoimprint lithography”, ICSICT., pp. 2476 - 2479, (2008).

书籍章节

[1] J Wan, S. Cristoloveanu, S. T. Le, A. Zaslavsky, C. Le Royer, S. A. Dayeh, D. E. Perea, S. T. Picraux, “Sharp-Switching CMOS-Compatible Devices with High Current Drive”, in: “Future Trends in Microelectronics: Frontiers and Innovations”, (2013). Wiley-Interscience, ,  62 (19) :67-8