万景 - 师资队伍 - 复旦大学未来信息创新学院

硅基先进工艺集成与器件（招收推免及卓博计划学生）
1. 硅-二维异质集成
2. 先进节点工艺集成
3. 新型逻辑与存储器件（CFET，FinFET，DRAM，低亚阈摆幅）
半导体传感器件（招收推免及卓博计划学生）

高性能图像与光电传感(PISD，ICPD，波长探测器)
纳米结构增强光电与气体传感

人工智能应用于芯片设计EDA（招收工程硕士）
1. 人工智能应用于模拟芯片前端设计
2. 人工智能应用于模拟芯片后端布局布线

小组长期招聘博士后（半导体器件工艺方向）

IEEE Senior member
多个IEEE国际会议分会主席和技术委员，如IEEE S3S，IEEE ICSICT，IEEE IWJT，IEEE ICTA 和IEEE ICICDT等
多个会议邀请报告，如半导体青年学术会议，光学工程学会，IEEE ICSICT，IEEE IWJT，IEEE ICTA ，IEEE ICICDT，IEEE ICICM等
Nature Electronics，IEEE EDL，IEEE TED，IEEE TDMR, Applied physics letters, Solid-state electronics, Microelectronics Journal和Journal of applied physics等杂志审稿人

2024----指导研究生获两项IEEE ISEDA 国际会议优秀学生论文奖
2019-2021----指导研究生连续三年获IEEE CSTIC 国际会议优秀学生论文奖
2021----PSSA 杂志60周年封面文章
2021---指导研究生获国家奖学金2人次
2020---国家级一流本科课程（半导体器件与物理）
2019---指导研究生获国家奖学金
2019---指导研究生获复旦-KLA 企业奖学金（全校12人之一）
2019---半导体器件顶级期刊 IEEE EDL 封面文章
2019----上海市青年科技启明星
2016----海外高层次引进人才青年项目
2014----IEEE EDL金牌审稿人
2013----法国纳米科学基金委优秀博士论文奖
2012----提名IEEE EDL, George E. Smith 奖
2012----VLSI-TSA最佳会议报告奖
2012----EuroSOI最佳会议报告奖
2009----上海市优秀硕士论文

2016.09至今复旦大学研究员
2012.10 至 2016.08 Globalfoundries公司，美国 Malta site，高级工程师
2009.07至2012.10 法国格勒诺布尔大学纳米电子与纳米技术博士（CNRS，CEA-LETI）
2006.09至2009.07 复旦大学微电子与固体电子学硕士
2001.09 至2005.07 南昌大学电子信息工程学士

半导体器件物理，研究生必修课；
现代CMOS器件，研究生选修课；
电子系统导论，本科生必修课；

一作/通信发表SCI/EI 100余篇，申请发明专利50余项。

代表作：

[1] Ling Tong, Jing Wan*, Kai Xiao, Jian Liu, Jingyi Ma, Xiaojiao Guo, Lihui Zhou, Xinyu Chen, Yin Xia, Sheng Dai, Zihan Xu, Wenzhong Bao* & Peng Zhou*, Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide, Nature Electronics, 6, 37–44 (2023). https://doi.org/10.1038/s41928-022-00881-0

[2] Kai Xiao, Jing Wan*, Hui Xie, Yuxuan Zhu, Tian Tian, Wei Zhang, Yingxin Chen, Jinshu Zhang, Lihui Zhou, Sheng Dai, Zihan Xu, Wenzhong Bao* and Peng Zhou*, High performance Si-MoS2 heterogeneous embedded DRAM, Nature Communications, 15(1), p.9782 (2024). https://doi.org/10.1038/s41467-024-54218-w

[3] Baowei Yuan, Zhibo Chen, Yingxin Chen, Chengjie Tang, Weiao Chen, Zengguang Cheng, Chunsong Zhao, Zhaozhao Hou, Qiang Zhang,Weizhuo Gan, Jiacheng Gao, Jiale Wang, Jeffrey Xu, Guangxi Hu，Zhenhua Wu , Kun Luo,MingyanLuo, Yuanbo Zhang , Zengxing Zhang,Shisheng Xiong , Chunxiao Cong , Wenzhong Bao , Shunli Ma, Jing Wan*, Peng Zhou* and Ye Lu *High drain field impact ionization transistors as ideal switches. Nature Communications, 15, 9038(2024).

[4] Xinyu Chen , Yufeng Xie , Yaochen Sheng , Hongwei Tang , Zeming Wang , Yu Wang , Yin Wang , Fuyou Liao , Jingyi Ma , Xiaojiao Guo , Ling Tong , Hanqi Liu , Hao Liu , Tianxiang Wu , Jiaxin Cao , Sitong Bu , Hui Shen , Fuyu Bai , Daming Huang , Jianan Deng , Antoine Riaud , Zihan Xu , Chenjian Wu , Shiwei Xing , Ye Lu , Shunli Ma , Zhengzong Sun , Zhong-Ying Xue , Professor Zengfeng Di , Xiao Gong , David Wei Zhang , Peng Zhou*, Jing Wan*, Wenzhong Bao*, wafer-Scale Functional Circuits Based on Two Dimensional Semiconductors with Fabrication Optimized by Machine Learning, Nature Communications, 12, 5953 (2021) 10.1038/s41467-021-26230-x

[5] Hui Xie, Jingya Cao, Rongshan He, Peng Zhou, Yu-Long Jiang*, Yong Xu*, Fanyu Liu* and Jing Wan*. “Integrating 3T-DRAM into 1T Layout with Substrate Bipolar Effect Using 22 nm FDSOI Technology”, IEEE Electron Device Letters, 46, 393-396 (2025) DOI:10.1109/LED.2024.3523371.

[6] Tian Tian , Jinshu Zhang , Kai Xiao , Yingxin Chen , Yuxuan Zhu , Peng Zhou , Wenzhong Bao*, Junhao Chu, Jing Wan*, Graphene/Silicon-on-insulator Heterogenous Cascode Amplifier with High Gain, IEEE Electron Device Letters， 10.1109/LED.2024.3464647.

[7] H. Xie, W. Zhang, P. Zhou, S. Cristoloveanu, Y Xu*, FY Liu* and J Wan*, "A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology", IEEE Electron Device Letters, 45, 558-561 (2024).

[8] W. Zhang, P. Zhou, Yu-Long Jiang*, FY. Liu* and J. Wan*, "A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability", IEEE Electron Device Letters, 45, 124-127 (2024).

[9] Zhao-Zhang Yan, Xue-Jiao Wang, Zhao-Yang Li, Quan Jing, Yu-Long Jiang*, Jing Wan*, Performance Improvement Induced by Metal Gate Undercut for Ring Oscillator, IEEE Electron Device Letters, 44, 983-986 (2023)

[10] YingXin Chen, Kai Xiao, YaJie Qin*, FanYu Liu* and Jing Wan*, A Compact Artificial Spiking Neuron Using a Sharp-Switching FET With Ultra-Low Energy Consumption Down to 0.45 fJ/spike, IEEE Electron Device Letters, 44, 160-163 (2023)，10.1109/LED.2022.3219465

[11] Haihua Wang, Yu-Long Jiang*, Jing Wan*, Significant Performance Improvement of MicroRNA-375 Detection by Modulation of Au Nanoparticle Distribution Using SOI MOSFET, IEEE Electron Device Letters, 43, 128-130 (2022), 10.1109/LED.2021.3129347

[12] Zhao-Yang Li, Xue-Jiao Wang, Han-Lun Cai, Zhao-Zhang Yan, Yu-Long Jiang*, Jing Wan*, “Difference between Atomic Layer Deposition TiAl and Physical Vapor Deposition TiAl in Threshold Voltage Tuning for Metal Gated NMOSFETs”, IEEE Electron Device Letters, 42, 1830-1833, (2021), 10.1109/LED.2021.3124801

[13] J. Liu, Y. -F. Cao, X. -J. Wang, Y. -L. Jiang*, J. Wan*, A Novel One-transistor Active Pixel Sensor with Tunable Sensitivity, IEEE Electron Device Letters, 42, 927, (2021) doi: 10.1109/LED.2021.3073930.

[14] Yong-Feng Cao, M. Arsalan, J. Liu, Yu-Long Jiang* and J. Wan*, A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology. IEEE Electron Device Letters. 40, 738-741 (2019) 封面文章

[15] JN. Deng, ZX. Guo, YW. Zhang, XY. Cao, SM. Zhang, YC. Sheng, H. Xu, WZ. Bao* and J. Wan^*, MoS2/silicon-on-insulator Heterojunction Field-Effect-Transistor for High-performance Photodetection. IEEE Electron Device Letters. 40, 423-426 (2019)

[16] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Novel Bipolar-Enhanced Tunneling FET (BET-FET) with Simulated High ON Current”, IEEE Electron Device Letters. 34, 24 (2013).

[17] J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration”, IEEE Electron Device Letters. 33, 179 (2012). 提名 2012 年 IEEE 电子学会 George E. Smith 奖